SQD50P04-09L_T4GE3 Vishay Siliconix

Description: MOSFET P-CH 40V 50A TO252AA, Input Capacitance (Ciss) (Max) @ Vds: 6675 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 136W (Tc), Rds On (Max) @ Id, Vgs: 9.4mOhm @ 17A, 10V, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), FET Type: P-Channel, Technology: MOSFET (Metal Oxide).