SQD50P04-13L_GE3
Produktcode: 185273
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Transistoren > Transistoren P-Kanal-Feld
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Weitere Produktangebote SQD50P04-13L_GE3 nach Preis ab 2.15 EUR bis 6.32 EUR
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SQD50P04-13L_GE3 | Vishay Siliconix |
Description: MOSFET P-CH 40V 50A TO252 Input Capacitance (Ciss) (Max) @ Vds: 3590 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 3W (Ta), 136W (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 17A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
auf Bestellung 1870 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD50P04-13L_GE3 | Vishay / Siliconix |
MOSFETs 40V 50A 83W AEC-Q101 Qualified |
auf Bestellung 9476 Stücke: Lieferzeit 10-14 Tag (e) |
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| SQD50P04-13L_GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 50A TO252
Input Capacitance (Ciss) (Max) @ Vds: 3590 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 40V 50A TO252
Input Capacitance (Ciss) (Max) @ Vds: 3590 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 1870 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 6.14 EUR |
| 10+ | 4.03 EUR |
| 100+ | 2.82 EUR |
| 500+ | 2.43 EUR |
| 1000+ | 2.15 EUR |
| SQD50P04-13L_GE3 |
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Hersteller: Vishay / Siliconix
MOSFETs 40V 50A 83W AEC-Q101 Qualified
MOSFETs 40V 50A 83W AEC-Q101 Qualified
auf Bestellung 9476 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 6.32 EUR |
| 10+ | 4.15 EUR |
| 100+ | 2.9 EUR |
| 500+ | 2.43 EUR |
| 2000+ | 2.31 EUR |