SQJ114ELP-T1_GE3 Vishay / Siliconix
| Anzahl | Privatkunde |
|---|---|
| 2+ | 3.27 EUR |
| 10+ | 2.07 EUR |
| 100+ | 1.38 EUR |
| 500+ | 1.13 EUR |
| 1000+ | 1.02 EUR |
| 3000+ | 0.87 EUR |
| 6000+ | 0.83 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SQJ114ELP-T1_GE3 Vishay / Siliconix
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 33A; Idm: 126A, Application: automotive industry, Pulsed drain current: 126A, Power dissipation: 115W, Gate charge: 50nC, Polarisation: unipolar, Technology: TrenchFET®, Drain current: 33A, Kind of channel: enhancement, Drain-source voltage: 100V, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, Kind of package: reel; tape, Case: PowerPAK® SO8, On-state resistance: 12.1mΩ, Mounting: SMD.
Weitere Produktangebote SQJ114ELP-T1_GE3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| SQJ114ELP-T1_GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 33A; Idm: 126A Application: automotive industry Pulsed drain current: 126A Power dissipation: 115W Gate charge: 50nC Polarisation: unipolar Technology: TrenchFET® Drain current: 33A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: PowerPAK® SO8 On-state resistance: 12.1mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SQJ114ELP-T1_GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 33A; Idm: 126A
Application: automotive industry
Pulsed drain current: 126A
Power dissipation: 115W
Gate charge: 50nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 33A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PowerPAK® SO8
On-state resistance: 12.1mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 33A; Idm: 126A
Application: automotive industry
Pulsed drain current: 126A
Power dissipation: 115W
Gate charge: 50nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 33A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PowerPAK® SO8
On-state resistance: 12.1mΩ
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH