SQJ138EP-T1_GE3 Vishay / Siliconix
| Anzahl | Preis |
|---|---|
| 2+ | 2.69 EUR |
| 10+ | 2.06 EUR |
| 100+ | 1.5 EUR |
| 500+ | 1.2 EUR |
| 1000+ | 1.1 EUR |
| 3000+ | 0.98 EUR |
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Technische Details SQJ138EP-T1_GE3 Vishay / Siliconix
Description: MOSFET N-CH 40V 330A PPAK SO-8, Input Capacitance (Ciss) (Max) @ Vds: 4715 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Power Dissipation (Max): 312W (Tc), Rds On (Max) @ Id, Vgs: 1.8mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 330A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.
Weitere Produktangebote SQJ138EP-T1_GE3 nach Preis ab 0.95 EUR bis 2.85 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| SQJ138EP-T1_GE3 | Vishay Siliconix |
 Description: MOSFET N-CH 40V 330A PPAK SO-8Input Capacitance (Ciss) (Max) @ Vds: 4715 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 312W (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 330A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
auf Bestellung 27000 Stücke: Lieferzeit 10-14 Tag (e) |
|
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| SQJ138EP-T1_GE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 330A PPAK SO-8 Input Capacitance (Ciss) (Max) @ Vds: 4715 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 312W (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 330A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
auf Bestellung 28243 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SQJ138EP-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 330A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 4715 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 312W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 330A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 40V 330A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 4715 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 312W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 330A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.95 EUR |
| SQJ138EP-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 330A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 4715 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 312W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 330A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 40V 330A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 4715 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 312W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 330A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 28243 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 2.85 EUR |
| 10+ | 1.93 EUR |
| 100+ | 1.36 EUR |
| 500+ | 1.11 EUR |
| 1000+ | 1.03 EUR |