SQJ148EP-T1_GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 15A PPAK SO-8
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.41 EUR |
| 6000+ | 0.39 EUR |
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Technische Details SQJ148EP-T1_GE3 Vishay Siliconix
Description: MOSFET N-CH 40V 15A PPAK SO-8, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 45W (Tc), Rds On (Max) @ Id, Vgs: 33mOhm @ 7A, 10V, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR).
Weitere Produktangebote SQJ148EP-T1_GE3 nach Preis ab 0.46 EUR bis 1.07 EUR
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SQJ148EP-T1_GE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 15A PPAK SO-8 Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 7A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) Qualification: AEC-Q101 |
auf Bestellung 8555 Stücke: Lieferzeit 10-14 Tag (e) |
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SQJ148EP-T1_GE3 | Vishay / Siliconix |
MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified |
auf Bestellung 158 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SQJ148EP-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 15A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 15A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
auf Bestellung 8555 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 1.07 EUR |
| 19+ | 0.93 EUR |
| 100+ | 0.64 EUR |
| 500+ | 0.54 EUR |
| 1000+ | 0.46 EUR |
| SQJ148EP-T1_GE3 |
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Hersteller: Vishay / Siliconix
MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified
MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified
auf Bestellung 158 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH