SQJ152EP-T1_GE3 Vishay / Siliconix
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.81 EUR |
| 10+ | 1.32 EUR |
| 100+ | 1.18 EUR |
| 500+ | 0.93 EUR |
| 3000+ | 0.74 EUR |
| 9000+ | 0.65 EUR |
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
2 Stücke
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Technische Details SQJ152EP-T1_GE3 Vishay / Siliconix
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 66A; Idm: 189A, Mounting: SMD, Pulsed drain current: 189A, Power dissipation: 136W, Gate charge: 27nC, Polarisation: unipolar, Technology: TrenchFET®, Drain current: 66A, Kind of channel: enhancement, Drain-source voltage: 40V, Application: automotive industry, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, Kind of package: reel; tape, Case: PowerPAK® SO8, On-state resistance: 5.1mΩ.
Weitere Produktangebote SQJ152EP-T1_GE3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
SQJ152EP-T1_GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 66A; Idm: 189A Mounting: SMD Pulsed drain current: 189A Power dissipation: 136W Gate charge: 27nC Polarisation: unipolar Technology: TrenchFET® Drain current: 66A Kind of channel: enhancement Drain-source voltage: 40V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: PowerPAK® SO8 On-state resistance: 5.1mΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SQJ152EP-T1_GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 66A; Idm: 189A
Mounting: SMD
Pulsed drain current: 189A
Power dissipation: 136W
Gate charge: 27nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 66A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PowerPAK® SO8
On-state resistance: 5.1mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 66A; Idm: 189A
Mounting: SMD
Pulsed drain current: 189A
Power dissipation: 136W
Gate charge: 27nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 66A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PowerPAK® SO8
On-state resistance: 5.1mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH