SQJ186ELP-T1_GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 80 V (D-S)
Qualification: AEC-Q101
Grade: Automotive
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 135W (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2325 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
| Anzahl | Preis |
|---|---|
| 3000+ | 0.62 EUR |
| 6000+ | 0.58 EUR |
| 9000+ | 0.55 EUR |
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Technische Details SQJ186ELP-T1_GE3 Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 80 V (D-S), Qualification: AEC-Q101, Grade: Automotive, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 135W (Tc), Rds On (Max) @ Id, Vgs: 12.5mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 66A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 2325 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V.
Weitere Produktangebote SQJ186ELP-T1_GE3 nach Preis ab 0.59 EUR bis 9.08 EUR
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SQJ186ELP-T1_GE3 | Vishay Semiconductors |
MOSFET Automotive N-Channel 80V D-S 175C MOSFET PowerPAK SO-8L BWL , 12.5 mO 10V |
auf Bestellung 5233 Stücke: Lieferzeit 10-14 Tag (e) |
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SQJ186ELP-T1_GE3 | Vishay Siliconix |
Description: AUTOMOTIVE N-CHANNEL 80 V (D-S) Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 2325 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 135W (Tc) Rds On (Max) @ Id, Vgs: 12.5mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 66A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) Drain to Source Voltage (Vdss): 80 V |
auf Bestellung 11453 Stücke: Lieferzeit 10-14 Tag (e) |
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SQJ186ELP-T1-GE3 | Vishay Semiconductors | MOSFET N-CHANNEL 80-V (D-S) 175C MOSF |
auf Bestellung 6050 Stücke: Lieferzeit 375-379 Tag (e) |
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| SQJ186ELP-T1_GE3 |
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Hersteller: Vishay Semiconductors
MOSFET Automotive N-Channel 80V D-S 175C MOSFET PowerPAK SO-8L BWL , 12.5 mO 10V
MOSFET Automotive N-Channel 80V D-S 175C MOSFET PowerPAK SO-8L BWL , 12.5 mO 10V
auf Bestellung 5233 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.49 EUR |
| 10+ | 1.22 EUR |
| 100+ | 0.95 EUR |
| 500+ | 0.81 EUR |
| 1000+ | 0.73 EUR |
| 3000+ | 0.62 EUR |
| 6000+ | 0.59 EUR |
| SQJ186ELP-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 80 V (D-S)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2325 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 135W (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 80 V
Description: AUTOMOTIVE N-CHANNEL 80 V (D-S)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2325 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 135W (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 80 V
auf Bestellung 11453 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 2.38 EUR |
| 12+ | 1.5 EUR |
| 100+ | 0.99 EUR |
| 500+ | 0.78 EUR |
| 1000+ | 0.71 EUR |
| SQJ186ELP-T1-GE3 |
Hersteller: Vishay Semiconductors
MOSFET N-CHANNEL 80-V (D-S) 175C MOSF
MOSFET N-CHANNEL 80-V (D-S) 175C MOSF
auf Bestellung 6050 Stücke:
Lieferzeit 375-379 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 9.08 EUR |
| 10+ | 8.15 EUR |
| 100+ | 6.69 EUR |
| 500+ | 5.68 EUR |
| 1000+ | 4.8 EUR |
| 2000+ | 4.35 EUR |