SQJ202EP-T1_GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 12V 20A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W, 48W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A, 60A
Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 6V
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.7 EUR |
| 10+ | 2.21 EUR |
| 100+ | 1.73 EUR |
| 500+ | 1.46 EUR |
| 1000+ | 1.19 EUR |
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Lieferzeit:
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Mindestmenge:
8 Stücke
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Technische Details SQJ202EP-T1_GE3 Vishay Siliconix
Description: MOSFET 2N-CH 12V 20A PPAK SO8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 27W, 48W, Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 20A, 60A, Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 6V, Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V, Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.
Weitere Produktangebote SQJ202EP-T1_GE3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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SQJ202EP-T1_GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 12V 20A PPAK SO8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 27W, 48W Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 20A, 60A Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 6V Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
SQJ202EP-T1_GE3 | Vishay / Siliconix |
MOSFETs Dual N Ch 12V Vds AEC-Q101 Qualified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SQJ202EP-T1_GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 12V; PowerPAK® SO8 Mounting: SMD Polarisation: unipolar Technology: TrenchFET® Kind of channel: enhancement Drain-source voltage: 12V Type of transistor: N-MOSFET x2 Gate-source voltage: ±20V Kind of package: reel; tape Case: PowerPAK® SO8 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SQJ202EP-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 12V 20A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W, 48W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A, 60A
Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 6V
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: MOSFET 2N-CH 12V 20A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W, 48W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A, 60A
Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 6V
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SQJ202EP-T1_GE3 |
|
Hersteller: Vishay / Siliconix
MOSFETs Dual N Ch 12V Vds AEC-Q101 Qualified
MOSFETs Dual N Ch 12V Vds AEC-Q101 Qualified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SQJ202EP-T1_GE3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 12V; PowerPAK® SO8
Mounting: SMD
Polarisation: unipolar
Technology: TrenchFET®
Kind of channel: enhancement
Drain-source voltage: 12V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PowerPAK® SO8
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 12V; PowerPAK® SO8
Mounting: SMD
Polarisation: unipolar
Technology: TrenchFET®
Kind of channel: enhancement
Drain-source voltage: 12V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PowerPAK® SO8
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH