SQJ202EP-T2_GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 12V 20A PPAK SO8
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 54nC @ 10V
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V, 3.3mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 6V, 2525pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
Drain to Source Voltage (Vdss): 12V
Power - Max: 27W (Tc), 48W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Qualification: AEC-Q101
Grade: Automotive
| Anzahl | Preis |
|---|---|
| 3000+ | 0.87 EUR |
| 6000+ | 0.81 EUR |
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Technische Details SQJ202EP-T2_GE3 Vishay Siliconix
Description: MOSFET 2N-CH 12V 20A PPAK SO8, Packaging: Tape & Reel (TR), Part Status: Active, Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric, Vgs(th) (Max) @ Id: 2V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 54nC @ 10V, Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V, 3.3mOhm @ 20A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 6V, 2525pF @ 6V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc), Drain to Source Voltage (Vdss): 12V, Power - Max: 27W (Tc), 48W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8 Dual, Qualification: AEC-Q101, Grade: Automotive.
Weitere Produktangebote SQJ202EP-T2_GE3 nach Preis ab 0.98 EUR bis 3.15 EUR
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SQJ202EP-T2_GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 12V 20A PPAK SO8 Part Status: Active Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 54nC @ 10V Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V, 3.3mOhm @ 20A, 10V Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 6V, 2525pF @ 6V Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc) Drain to Source Voltage (Vdss): 12V Power - Max: 27W (Tc), 48W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SQJ202EP-T2_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 12V 20A PPAK SO8
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 54nC @ 10V
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V, 3.3mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 6V, 2525pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
Drain to Source Voltage (Vdss): 12V
Power - Max: 27W (Tc), 48W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET 2N-CH 12V 20A PPAK SO8
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 54nC @ 10V
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V, 3.3mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 6V, 2525pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
Drain to Source Voltage (Vdss): 12V
Power - Max: 27W (Tc), 48W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 3.15 EUR |
| 10+ | 2.01 EUR |
| 100+ | 1.35 EUR |
| 500+ | 1.07 EUR |
| 1000+ | 0.98 EUR |