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SQJ409EP-T2_GE3

SQJ409EP-T2_GE3 Vishay Siliconix

sqj409ep.pdf Hersteller: Vishay Siliconix
Description: P-CHANNEL 40-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.97 EUR
6000+ 0.92 EUR
9000+ 0.88 EUR
Mindestbestellmenge: 3000
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Technische Details SQJ409EP-T2_GE3 Vishay Siliconix

Description: P-CHANNEL 40-V (D-S) 175C MOSFET, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V, Power Dissipation (Max): 68W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote SQJ409EP-T2_GE3 nach Preis ab 1.03 EUR bis 3.46 EUR

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SQJ409EP-T2_GE3 SQJ409EP-T2_GE3 Hersteller : Vishay Siliconix sqj409ep.pdf Description: P-CHANNEL 40-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 20429 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.34 EUR
10+ 1.91 EUR
100+ 1.49 EUR
500+ 1.26 EUR
1000+ 1.03 EUR
Mindestbestellmenge: 8
SQJ409EP-T2_GE3 SQJ409EP-T2_GE3 Hersteller : Vishay / Siliconix sqj409ep.pdf MOSFET P-CHANNEL 40-V (D-S) 175C MOSFET
auf Bestellung 49014 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
16+3.46 EUR
19+ 2.86 EUR
100+ 2.21 EUR
500+ 1.88 EUR
1000+ 1.77 EUR
3000+ 1.5 EUR
Mindestbestellmenge: 16
SQJ409EP-T2_GE3 Hersteller : Vishay sqj409ep.pdf Automotive P-Channel
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SQJ409EP-T2_GE3 SQJ409EP-T2_GE3 Hersteller : Vishay sqj409ep.pdf Trans MOSFET P-CH 40V 60A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO EP T/R
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SQJ409EP-T2/GE3 Hersteller : Vishay MOSFET
Produkt ist nicht verfügbar