SQJ412EP-T1_GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 32A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 5950 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 10.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
| Anzahl | Preis |
|---|---|
| 3000+ | 1.74 EUR |
| 6000+ | 1.68 EUR |
| 9000+ | 1.62 EUR |
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Technische Details SQJ412EP-T1_GE3 Vishay Siliconix
Description: MOSFET N-CH 40V 32A PPAK SO-8, Input Capacitance (Ciss) (Max) @ Vds: 5950 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 83W (Tc), Rds On (Max) @ Id, Vgs: 4.1mOhm @ 10.3A, 10V, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.
Weitere Produktangebote SQJ412EP-T1_GE3 nach Preis ab 1.72 EUR bis 3.87 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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SQJ412EP-T1_GE3 | Vishay Semiconductors |
MOSFET 40V 32A 83W AEC-Q101 Qualified |
auf Bestellung 5758 Stücke: Lieferzeit 10-14 Tag (e) |
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SQJ412EP-T1_GE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 32A PPAK SO-8 Input Capacitance (Ciss) (Max) @ Vds: 5950 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 10.3A, 10V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
auf Bestellung 24798 Stücke: Lieferzeit 10-14 Tag (e) |
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SQJ412EP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 32A PPAK SO-8 |
auf Bestellung 1253 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SQJ412EP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 32A PPAK SO-8 |
auf Bestellung 1253 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SQJ412EP-T1_GE3 |
|
Hersteller: Vishay Semiconductors
MOSFET 40V 32A 83W AEC-Q101 Qualified
MOSFET 40V 32A 83W AEC-Q101 Qualified
auf Bestellung 5758 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.85 EUR |
| 10+ | 3.19 EUR |
| 100+ | 2.55 EUR |
| 250+ | 2.36 EUR |
| 500+ | 2.13 EUR |
| 1000+ | 1.83 EUR |
| 3000+ | 1.72 EUR |
| SQJ412EP-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 32A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 5950 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 10.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 40V 32A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 5950 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 10.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 24798 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 3.87 EUR |
| 10+ | 3.21 EUR |
| 100+ | 2.55 EUR |
| 500+ | 2.16 EUR |
| 1000+ | 1.83 EUR |
| SQJ412EP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 32A PPAK SO-8
Description: MOSFET N-CH 40V 32A PPAK SO-8
auf Bestellung 1253 Stücke:
Lieferzeit 10-14 Tag (e)
| SQJ412EP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 32A PPAK SO-8
Description: MOSFET N-CH 40V 32A PPAK SO-8
auf Bestellung 1253 Stücke:
Lieferzeit 10-14 Tag (e)