SQJ431AEP-T1_BE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: P-CHANNEL 200-V (D-S) 175C MOSFE
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Grade: Automotive
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 305mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
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Technische Details SQJ431AEP-T1_BE3 Vishay Siliconix
Description: VISHAY - SQJ431AEP-T1"BE3 - P-CHANNEL 200-V (D-S) 175C MOSFET 87AJ3497, tariffCode: 0, Transistormontage: Surface Mount, Drain-Source-Spannung Vds: 200V, rohsCompliant: TBA, Dauer-Drainstrom Id: 9.4A, hazardous: false, rohsPhthalatesCompliant: TBA, Qualifikation: AEC-Q101, isCanonical: Y, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 3.5V, euEccn: NLR, Verlustleistung: 68W, Bauform - Transistor: PowerPAK SO, Anzahl der Pins: 4Pin(s), Produktpalette: TrenchFET Series, productTraceability: Yes-Date/Lot Code, Kanaltyp: P Channel, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 0.305ohm, directShipCharge: 25, SVHC: To Be Advised.
Weitere Produktangebote SQJ431AEP-T1_BE3 nach Preis ab 1.16 EUR bis 3.59 EUR
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SQJ431AEP-T1_BE3 | Vishay Semiconductors |
MOSFETs PowerPAK SO-8L |
auf Bestellung 1308 Stücke: Lieferzeit 10-14 Tag (e) |
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SQJ431AEP-T1_BE3 | Vishay Siliconix |
Description: P-CHANNEL 200-V (D-S) 175C MOSFE Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Grade: Automotive Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 305mOhm @ 3.8A, 10V Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) |
auf Bestellung 3802 Stücke: Lieferzeit 10-14 Tag (e) |
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SQJ431AEP-T1"BE3 | VISHAY |
Description: VISHAY - SQJ431AEP-T1"BE3 - P-CHANNEL 200-V (D-S) 175C MOSFET 87AJ3497 tariffCode: 0 Transistormontage: Surface Mount Drain-Source-Spannung Vds: 200V rohsCompliant: TBA Dauer-Drainstrom Id: 9.4A hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: AEC-Q101 isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.5V euEccn: NLR Verlustleistung: 68W Bauform - Transistor: PowerPAK SO Anzahl der Pins: 4Pin(s) Produktpalette: TrenchFET Series productTraceability: Yes-Date/Lot Code Kanaltyp: P Channel Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.305ohm directShipCharge: 25 SVHC: To Be Advised |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SQJ431AEP-T1_BE3 |
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Hersteller: Vishay Semiconductors
MOSFETs PowerPAK SO-8L
MOSFETs PowerPAK SO-8L
auf Bestellung 1308 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.59 EUR |
| 10+ | 2.34 EUR |
| 100+ | 1.65 EUR |
| 500+ | 1.34 EUR |
| 1000+ | 1.23 EUR |
| 3000+ | 1.16 EUR |
| SQJ431AEP-T1_BE3 |
|
Hersteller: Vishay Siliconix
Description: P-CHANNEL 200-V (D-S) 175C MOSFE
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Grade: Automotive
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 305mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Description: P-CHANNEL 200-V (D-S) 175C MOSFE
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Grade: Automotive
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 305mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 3802 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 3.59 EUR |
| 10+ | 2.31 EUR |
| 100+ | 1.57 EUR |
| 500+ | 1.26 EUR |
| 1000+ | 1.23 EUR |
| SQJ431AEP-T1"BE3 |
Hersteller: VISHAY
Description: VISHAY - SQJ431AEP-T1"BE3 - P-CHANNEL 200-V (D-S) 175C MOSFET 87AJ3497
tariffCode: 0
Transistormontage: Surface Mount
Drain-Source-Spannung Vds: 200V
rohsCompliant: TBA
Dauer-Drainstrom Id: 9.4A
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: AEC-Q101
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3.5V
euEccn: NLR
Verlustleistung: 68W
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 4Pin(s)
Produktpalette: TrenchFET Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: P Channel
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.305ohm
directShipCharge: 25
SVHC: To Be Advised
Description: VISHAY - SQJ431AEP-T1"BE3 - P-CHANNEL 200-V (D-S) 175C MOSFET 87AJ3497
tariffCode: 0
Transistormontage: Surface Mount
Drain-Source-Spannung Vds: 200V
rohsCompliant: TBA
Dauer-Drainstrom Id: 9.4A
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: AEC-Q101
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3.5V
euEccn: NLR
Verlustleistung: 68W
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 4Pin(s)
Produktpalette: TrenchFET Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: P Channel
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.305ohm
directShipCharge: 25
SVHC: To Be Advised
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)