| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.32 EUR |
| 10+ | 2.24 EUR |
| 100+ | 1.96 EUR |
| 500+ | 1.59 EUR |
| 1000+ | 1.51 EUR |
| 3000+ | 1.37 EUR |
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Technische Details SQJ431AEP-T1_BE3 Vishay Semiconductors
Description: VISHAY - SQJ431AEP-T1"BE3 - P-CHANNEL 200-V (D-S) 175C MOSFET, tariffCode: 85412900, Transistormontage: Surface Mount, euEccn: NLR, Drain-Source-Spannung Vds: 200V, rohsCompliant: TBA, Dauer-Drainstrom Id: 9.4A, hazardous: false, rohsPhthalatesCompliant: TBA, Qualifikation: AEC-Q101, isCanonical: Y, Gate-Source-Schwellenspannung, max.: 3.5V, Verlustleistung: 68W, SVHC: To Be Advised, Bauform - Transistor: PowerPAK SO, Anzahl der Pins: 4Pin(s), Produktpalette: TrenchFET Series, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: P Channel, Betriebstemperatur, max.: 175°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 0.305ohm, directShipCharge: 25.
Weitere Produktangebote SQJ431AEP-T1_BE3 nach Preis ab 1.59 EUR bis 5.7 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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SQJ431AEP-T1_BE3 | Vishay Siliconix |
 Description: P-CHANNEL 200-V (D-S) 175C MOSFEPackaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc) Rds On (Max) @ Id, Vgs: 305mOhm @ 3.8A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 2601 Stücke: Lieferzeit 10-14 Tag (e) |
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SQJ431AEP-T1"BE3 | VISHAY |
Description: VISHAY - SQJ431AEP-T1"BE3 - P-CHANNEL 200-V (D-S) 175C MOSFET tariffCode: 85412900 Transistormontage: Surface Mount euEccn: NLR Drain-Source-Spannung Vds: 200V rohsCompliant: TBA Dauer-Drainstrom Id: 9.4A hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: AEC-Q101 isCanonical: Y Gate-Source-Schwellenspannung, max.: 3.5V Verlustleistung: 68W SVHC: To Be Advised Bauform - Transistor: PowerPAK SO Anzahl der Pins: 4Pin(s) Produktpalette: TrenchFET Series productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: P Channel Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.305ohm directShipCharge: 25 |
auf Bestellung 2972 Stücke: Lieferzeit 14-21 Tag (e) |
|
| SQJ431AEP-T1_BE3 |
|
Hersteller: Vishay Siliconix
Description: P-CHANNEL 200-V (D-S) 175C MOSFE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 305mOhm @ 3.8A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
Qualification: AEC-Q101
Description: P-CHANNEL 200-V (D-S) 175C MOSFE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 305mOhm @ 3.8A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2601 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.8 EUR |
| 10+ | 3.08 EUR |
| 50+ | 2.34 EUR |
| 100+ | 2.11 EUR |
| 500+ | 1.68 EUR |
| SQJ431AEP-T1"BE3 |
Hersteller: VISHAY
Description: VISHAY - SQJ431AEP-T1"BE3 - P-CHANNEL 200-V (D-S) 175C MOSFET
tariffCode: 85412900
Transistormontage: Surface Mount
euEccn: NLR
Drain-Source-Spannung Vds: 200V
rohsCompliant: TBA
Dauer-Drainstrom Id: 9.4A
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: AEC-Q101
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 3.5V
Verlustleistung: 68W
SVHC: To Be Advised
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 4Pin(s)
Produktpalette: TrenchFET Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: P Channel
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.305ohm
directShipCharge: 25
Description: VISHAY - SQJ431AEP-T1"BE3 - P-CHANNEL 200-V (D-S) 175C MOSFET
tariffCode: 85412900
Transistormontage: Surface Mount
euEccn: NLR
Drain-Source-Spannung Vds: 200V
rohsCompliant: TBA
Dauer-Drainstrom Id: 9.4A
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: AEC-Q101
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 3.5V
Verlustleistung: 68W
SVHC: To Be Advised
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 4Pin(s)
Produktpalette: TrenchFET Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: P Channel
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.305ohm
directShipCharge: 25
auf Bestellung 2972 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 44+ | 5.7 EUR |
| 87+ | 2.67 EUR |
| 100+ | 2.19 EUR |
| 500+ | 1.76 EUR |
| 1000+ | 1.68 EUR |
| 2500+ | 1.59 EUR |