SQJ459EP-T1_GE3 Vishay
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.91 EUR |
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Produktbewertung abgeben
Technische Details SQJ459EP-T1_GE3 Vishay
Description: MOSFET P-CH 60V 52A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 52A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 3.5A, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4586 pF @ 30 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SQJ459EP-T1_GE3 nach Preis ab 0.7 EUR bis 3.35 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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SQJ459EP-T1_GE3 | Hersteller : Vishay | Trans MOSFET P-CH 60V 52A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SQJ459EP-T1_GE3 | Hersteller : Vishay | Trans MOSFET P-CH 60V 52A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R |
auf Bestellung 2544 Stücke: Lieferzeit 14-21 Tag (e) |
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SQJ459EP-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 60V 52A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 3.5A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4586 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 72000 Stücke: Lieferzeit 21-28 Tag (e) |
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SQJ459EP-T1_GE3 | Hersteller : Vishay | Trans MOSFET P-CH 60V 52A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SQJ459EP-T1_GE3 | Hersteller : Vishay | Trans MOSFET P-CH 60V 52A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R |
auf Bestellung 2544 Stücke: Lieferzeit 14-21 Tag (e) |
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SQJ459EP-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 60V 52A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 3.5A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4586 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 74101 Stücke: Lieferzeit 21-28 Tag (e) |
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SQJ459EP-T1_GE3 | Hersteller : Vishay Semiconductors | MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified |
auf Bestellung 44095 Stücke: Lieferzeit 14-28 Tag (e) |
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SQJ459EP-T1_GE3 | Hersteller : VISHAY |
Description: VISHAY - SQJ459EP-T1_GE3 - Leistungs-MOSFET, p-Kanal, 60 V, 52 A, 0.0155 ohm, PowerPAK SO, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 52A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 83W Anzahl der Pins: 8Pin(s) productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0155ohm |
auf Bestellung 1963 Stücke: Lieferzeit 14-21 Tag (e) |
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SQJ459EP-T1_GE3 | Hersteller : VISHAY |
Description: VISHAY - SQJ459EP-T1_GE3 - Leistungs-MOSFET, p-Kanal, 60 V, 52 A, 0.0155 ohm, PowerPAK SO, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 52A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 83W Anzahl der Pins: 8Pin(s) productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0155ohm |
auf Bestellung 1963 Stücke: Lieferzeit 14-21 Tag (e) |
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SQJ459EP-T1_GE3 | Hersteller : Vishay | Trans MOSFET P-CH 60V 52A Automotive 5-Pin(4+Tab) PowerPAK SO T/R |
auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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SQJ459EP-T1_GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -52A; Idm: -200A; 27W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -52A Pulsed drain current: -200A Power dissipation: 27W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 31mΩ Mounting: SMD Gate charge: 108nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SQJ459EP-T1_GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -52A; Idm: -200A; 27W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -52A Pulsed drain current: -200A Power dissipation: 27W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 31mΩ Mounting: SMD Gate charge: 108nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |