Produkte > VISHAY SILICONIX > SQJ459EP-T2_BE3
SQJ459EP-T2_BE3

SQJ459EP-T2_BE3 Vishay Siliconix

sqj459ep.pdf Hersteller: Vishay Siliconix
Description: P-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 3.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4586 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.77 EUR
6000+0.72 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details SQJ459EP-T2_BE3 Vishay Siliconix

Description: P-CHANNEL 60-V (D-S) 175C MOSFET, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 52A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 3.5A, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4586 pF @ 30 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote SQJ459EP-T2_BE3 nach Preis ab 0.80 EUR bis 2.41 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
SQJ459EP-T2_BE3 SQJ459EP-T2_BE3 Hersteller : Vishay Siliconix sqj459ep.pdf Description: P-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 3.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4586 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7541 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.34 EUR
11+1.64 EUR
100+1.21 EUR
500+0.95 EUR
1000+0.88 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
SQJ459EP-T2_BE3 SQJ459EP-T2_BE3 Hersteller : Vishay / Siliconix sqj459ep.pdf MOSFETs P-CHANNEL 60-V (D-S) 175C MOSFET
auf Bestellung 76933 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.41 EUR
10+1.69 EUR
100+1.30 EUR
500+1.03 EUR
1000+0.91 EUR
3000+0.82 EUR
6000+0.80 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
SQJ459EP-T2_BE3 Hersteller : Vishay sqj459ep.pdf Trans MOSFET P-CH 60V 52A 5-Pin(4+Tab) PowerPAK SO Automotive AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH