SQJ476EP-T1_BE3 Vishay Siliconix

Description: N-CHANNEL 100-V (D-S) 175C MOSFE, Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PowerPAK® SO-8, Rds On (Max) @ Id, Vgs: 38mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 23A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 45W (Tc).