Technische Details SQJ479EP-T1_BE3 Vishay
Description: P-CHANNEL 80-V (D-S) 175C MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 68W (Tc), Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR).
Weitere Produktangebote SQJ479EP-T1_BE3 nach Preis ab 0.75 EUR bis 3.42 EUR
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SQJ479EP-T1_BE3 | Vishay |
 Trans MOSFET P-CH 80V 32A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO EP T/R |
auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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SQJ479EP-T1_BE3 | Vishay Siliconix |
Description: P-CHANNEL 80-V (D-S) 175C MOSFET Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Tape & Reel (TR) |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQJ479EP-T1_BE3 | Vishay |
Trans MOSFET P-CH 80V 32A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SQJ479EP-T1_BE3 | Vishay Siliconix |
Description: P-CHANNEL 80-V (D-S) 175C MOSFET Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) |
auf Bestellung 8392 Stücke: Lieferzeit 10-14 Tag (e) |
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SQJ479EP-T1_BE3 | Vishay / Siliconix |
MOSFETs P-CHANNEL 80-V (D-S) 175C MOSFET |
auf Bestellung 210222 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SQJ479EP-T1_BE3 |
|
Hersteller: Vishay
Trans MOSFET P-CH 80V 32A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO EP T/R
Trans MOSFET P-CH 80V 32A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO EP T/R
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.75 EUR |
| SQJ479EP-T1_BE3 |
|
Hersteller: Vishay Siliconix
Description: P-CHANNEL 80-V (D-S) 175C MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Description: P-CHANNEL 80-V (D-S) 175C MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.94 EUR |
| 6000+ | 0.89 EUR |
| SQJ479EP-T1_BE3 |
|
Hersteller: Vishay
Trans MOSFET P-CH 80V 32A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO EP T/R
Trans MOSFET P-CH 80V 32A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO EP T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 1.65 EUR |
| SQJ479EP-T1_BE3 |
|
Hersteller: Vishay Siliconix
Description: P-CHANNEL 80-V (D-S) 175C MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Description: P-CHANNEL 80-V (D-S) 175C MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 8392 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.26 EUR |
| 12+ | 1.86 EUR |
| 100+ | 1.44 EUR |
| 500+ | 1.23 EUR |
| 1000+ | 1 EUR |
| SQJ479EP-T1_BE3 |
|
Hersteller: Vishay / Siliconix
MOSFETs P-CHANNEL 80-V (D-S) 175C MOSFET
MOSFETs P-CHANNEL 80-V (D-S) 175C MOSFET
auf Bestellung 210222 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.42 EUR |
| 10+ | 2.18 EUR |
| 100+ | 1.45 EUR |
| 500+ | 1.15 EUR |
| 1000+ | 1.05 EUR |
| 3000+ | 0.96 EUR |
| 6000+ | 0.93 EUR |