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SQJ850EP-T1_GE3

SQJ850EP-T1_GE3 Vishay Siliconix

sqj850ep.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 24A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 10.3A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.21 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SQJ850EP-T1_GE3 Vishay Siliconix

Description: MOSFET N-CH 60V 24A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 23mOhm @ 10.3A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 30 V, Qualification: AEC-Q101.

Weitere Produktangebote SQJ850EP-T1_GE3 nach Preis ab 1.26 EUR bis 3.70 EUR

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SQJ850EP-T1_GE3 SQJ850EP-T1_GE3 Hersteller : Vishay / Siliconix sqj850ep.pdf MOSFETs RECOMMENDED ALT SQJ4
auf Bestellung 2235 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+2.89 EUR
10+2.50 EUR
100+1.67 EUR
250+1.66 EUR
500+1.37 EUR
1000+1.27 EUR
3000+1.26 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SQJ850EP-T1_GE3 SQJ850EP-T1_GE3 Hersteller : Vishay Siliconix sqj850ep.pdf Description: MOSFET N-CH 60V 24A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 10.3A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 7949 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.70 EUR
10+2.52 EUR
100+1.85 EUR
500+1.50 EUR
1000+1.38 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
SQJ850EP-T1_GE3 SQJ850EP-T1_GE3 Hersteller : Vishay sqj850ep.pdf Trans MOSFET N-CH 60V 24A Automotive 5-Pin(4+Tab) PowerPAK SO EP T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SQJ850EP-T1-GE3 SQJ850EP-T1-GE3 Hersteller : Vishay Siliconix sqj850ep.pdf Description: MOSFET N-CH 60V 24A PPAK SO-8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH