SQJ886EP-T1_GE3 Vishay Semiconductors
| Anzahl | Preis |
|---|---|
| 2+ | 2.59 EUR |
| 10+ | 2.01 EUR |
| 100+ | 1.38 EUR |
| 500+ | 1.1 EUR |
| 1000+ | 1.03 EUR |
| 3000+ | 0.89 EUR |
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Technische Details SQJ886EP-T1_GE3 Vishay Semiconductors
Description: MOSFET N-CH 40V 60A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15.3A, 10V, Power Dissipation (Max): 55W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2922 pF @ 20 V, Qualification: AEC-Q101.
Weitere Produktangebote SQJ886EP-T1_GE3 nach Preis ab 1.03 EUR bis 3.15 EUR
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SQJ886EP-T1_GE3 | Vishay Siliconix |
 Description: MOSFET N-CH 40V 60A PPAK SO-8Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15.3A, 10V Power Dissipation (Max): 55W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2922 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 2832 Stücke: Lieferzeit 10-14 Tag (e) |
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SQJ886EP-T1_GE3 | Vishay / Siliconix |
MOSFET 40V 60A 55W AEC-Q101 Qualified |
auf Bestellung 8429 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SQJ886EP-T1_GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15.3A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2922 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15.3A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2922 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 2832 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.15 EUR |
| 10+ | 2.01 EUR |
| 100+ | 1.36 EUR |
| 500+ | 1.08 EUR |
| 1000+ | 1.03 EUR |
| SQJ886EP-T1_GE3 |
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Hersteller: Vishay / Siliconix
MOSFET 40V 60A 55W AEC-Q101 Qualified
MOSFET 40V 60A 55W AEC-Q101 Qualified
auf Bestellung 8429 Stücke:
Lieferzeit 10-14 Tag (e)