SQJ914EP-T1_GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET 2 N-CH 30V POWERPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 15V
Rds On (Max) @ Id, Vgs: 12mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
| Anzahl | Preis |
|---|---|
| 8+ | 2.29 EUR |
| 10+ | 2.05 EUR |
| 100+ | 1.6 EUR |
| 500+ | 1.32 EUR |
| 1000+ | 1.04 EUR |
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Technische Details SQJ914EP-T1_GE3 Vishay Siliconix
Description: MOSFET 2 N-CH 30V POWERPAK SO8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 27W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 15V, Rds On (Max) @ Id, Vgs: 12mOhm @ 4.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8 Dual, Part Status: Active.
Weitere Produktangebote SQJ914EP-T1_GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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SQJ914EP-T1_GE3 | Vishay / Siliconix |
MOSFET Dual 30V Vds 20V Vgs AEC-Q101 Qualified |
auf Bestellung 2194 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SQJ914EP-T1_GE3 |
|
Hersteller: Vishay / Siliconix
MOSFET Dual 30V Vds 20V Vgs AEC-Q101 Qualified
MOSFET Dual 30V Vds 20V Vgs AEC-Q101 Qualified
auf Bestellung 2194 Stücke:
Lieferzeit 10-14 Tag (e)