Produkte > VISHAY SILICONIX > SQJ960EP-T1_GE3
SQJ960EP-T1_GE3

SQJ960EP-T1_GE3 Vishay Siliconix

sqj960ep.pdf Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 8A
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 34W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 735pF @ 25V
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
auf Bestellung 2545 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+3.82 EUR
10+ 3.43 EUR
100+ 2.76 EUR
500+ 2.27 EUR
1000+ 1.88 EUR
Mindestbestellmenge: 5
Produktrezensionen
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Technische Details SQJ960EP-T1_GE3 Vishay Siliconix

Description: MOSFET 2N-CH 60V 8A, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 34W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 8A, Input Capacitance (Ciss) (Max) @ Vds: 735pF @ 25V, Rds On (Max) @ Id, Vgs: 36mOhm @ 5.3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8 Dual, Part Status: Active.

Weitere Produktangebote SQJ960EP-T1_GE3 nach Preis ab 2.28 EUR bis 5.04 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SQJ960EP-T1_GE3 SQJ960EP-T1_GE3 Hersteller : Vishay Semiconductors sqj960ep.pdf MOSFET 60V 8A 34W AEC-Q101 Qualified
auf Bestellung 81446 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
11+5.04 EUR
13+ 4.21 EUR
100+ 3.33 EUR
250+ 3.09 EUR
500+ 2.81 EUR
1000+ 2.4 EUR
3000+ 2.28 EUR
Mindestbestellmenge: 11
SQJ960EP-T1-GE3 SQJ960EP-T1-GE3 Hersteller : Vishay Siliconix sqj960ep.pdf Description: MOSFET 2N-CH 60V 8A 8SO
Produkt ist nicht verfügbar
SQJ960EP-T1_GE3 SQJ960EP-T1_GE3 Hersteller : Vishay Siliconix sqj960ep.pdf Description: MOSFET 2N-CH 60V 8A
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 34W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 735pF @ 25V
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
Produkt ist nicht verfügbar
SQJ960EP-T1-GE3 SQJ960EP-T1-GE3 Hersteller : Vishay / Siliconix sqj960ep-1764713.pdf MOSFET RECOMMENDED ALT 78-SQJ960EP-T1_GE3
Produkt ist nicht verfügbar