SQJ960EP-T1_GE3 Vishay Semiconductors
auf Bestellung 81446 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 3.41 EUR |
| 10+ | 2.85 EUR |
| 100+ | 2.25 EUR |
| 250+ | 2.09 EUR |
| 500+ | 1.9 EUR |
| 1000+ | 1.62 EUR |
| 3000+ | 1.54 EUR |
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Technische Details SQJ960EP-T1_GE3 Vishay Semiconductors
Description: MOSFET 2N-CH 60V 8A, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 34W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 8A, Input Capacitance (Ciss) (Max) @ Vds: 735pF @ 25V, Rds On (Max) @ Id, Vgs: 36mOhm @ 5.3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8 Dual, Part Status: Active.
Weitere Produktangebote SQJ960EP-T1_GE3 nach Preis ab 1.88 EUR bis 3.82 EUR
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SQJ960EP-T1_GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET 2N-CH 60V 8APackaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 34W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A Input Capacitance (Ciss) (Max) @ Vds: 735pF @ 25V Rds On (Max) @ Id, Vgs: 36mOhm @ 5.3A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Dual Part Status: Active |
auf Bestellung 2545 Stücke: Lieferzeit 10-14 Tag (e) |
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SQJ960EP-T1_GE3 Produktcode: 186737 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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SQJ960EP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 60V 8A 8SO |
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SQJ960EP-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 60V 8A Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 34W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A Input Capacitance (Ciss) (Max) @ Vds: 735pF @ 25V Rds On (Max) @ Id, Vgs: 36mOhm @ 5.3A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Dual Part Status: Active |
Produkt ist nicht verfügbar |
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SQJ960EP-T1-GE3 | Hersteller : Vishay / Siliconix |
MOSFET RECOMMENDED ALT 78-SQJ960EP-T1_GE3 |
Produkt ist nicht verfügbar |