SQJ963EP-T1_GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 60V 8A PPAK SO8
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 60V
Operating Temperature: -55°C ~ 175°C (TA)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Tape & Reel (TR)
Power - Max: 27W (Tc)
Technology: MOSFET (Metal Oxide)
Produktrezensionen
Produktbewertung abgeben
Technische Details SQJ963EP-T1_GE3 Vishay Siliconix
Description: MOSFET 2P-CH 60V 8A PPAK SO8, Qualification: AEC-Q101, Grade: Automotive, Part Status: Active, Supplier Device Package: PowerPAK® SO-8 Dual, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V, Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 30V, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Drain to Source Voltage (Vdss): 60V, Operating Temperature: -55°C ~ 175°C (TA), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8 Dual, Packaging: Tape & Reel (TR), Power - Max: 27W (Tc), Technology: MOSFET (Metal Oxide).
Weitere Produktangebote SQJ963EP-T1_GE3 nach Preis ab 1.29 EUR bis 4.17 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SQJ963EP-T1_GE3 | Vishay Semiconductors |
MOSFETs -60V -8A 27W AEC-Q101 Qualified |
auf Bestellung 18140 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
SQJ963EP-T1_GE3 | Vishay Siliconix |
Description: MOSFET 2P-CH 60V 8A PPAK SO8 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 30V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drain to Source Voltage (Vdss): 60V Power - Max: 27W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TA) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: PowerPAK® SO-8 Dual Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V |
auf Bestellung 3527 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SQJ963EP-T1_GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs -60V -8A 27W AEC-Q101 Qualified
MOSFETs -60V -8A 27W AEC-Q101 Qualified
auf Bestellung 18140 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.66 EUR |
| 10+ | 2.5 EUR |
| 100+ | 1.87 EUR |
| 250+ | 1.63 EUR |
| 500+ | 1.52 EUR |
| 1000+ | 1.41 EUR |
| 3000+ | 1.29 EUR |
| SQJ963EP-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 60V 8A PPAK SO8
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 27W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TA)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V
Description: MOSFET 2P-CH 60V 8A PPAK SO8
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 27W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TA)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V
auf Bestellung 3527 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 4.17 EUR |
| 10+ | 2.69 EUR |
| 100+ | 1.84 EUR |
| 500+ | 1.48 EUR |
| 1000+ | 1.36 EUR |