SQJ963EP-T1_GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET 2P-CH 60V 8A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TA)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 30V
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 1.22 EUR |
Produktrezensionen
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Technische Details SQJ963EP-T1_GE3 Vishay Siliconix
Description: MOSFET 2P-CH 60V 8A PPAK SO8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8 Dual, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TA), Technology: MOSFET (Metal Oxide), Power - Max: 27W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 30V, Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8 Dual, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SQJ963EP-T1_GE3 nach Preis ab 1.29 EUR bis 4.17 EUR
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SQJ963EP-T1_GE3 | Hersteller : Vishay Semiconductors |
MOSFETs -60V -8A 27W AEC-Q101 Qualified |
auf Bestellung 18140 Stücke: Lieferzeit 10-14 Tag (e) |
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SQJ963EP-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2P-CH 60V 8A PPAK SO8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TA) Technology: MOSFET (Metal Oxide) Power - Max: 27W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 30V Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Dual Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3527 Stücke: Lieferzeit 10-14 Tag (e) |
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SQJ963EP-T1_GE3 | Hersteller : Vishay |
SQJ963EP-T1-GE3 Vishay MOSFETs Transistor P-CH 60V 8A Automotive 5-Pin(4+Tab) PowerPAK SO - Arrow.com |
Produkt ist nicht verfügbar |
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SQJ963EP-T1_GE3 | Hersteller : Vishay |
SQJ963EP-T1-GE3 Vishay MOSFETs Transistor P-CH 60V 8A Automotive 5-Pin(4+Tab) PowerPAK SO - Arrow.com |
Produkt ist nicht verfügbar |
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SQJ963EP-T1_GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 60V 8A Automotive 5-Pin(4+Tab) PowerPAK SO T/R |
Produkt ist nicht verfügbar |
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| SQJ963EP-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 60V 8A Automotive 5-Pin(4+Tab) PowerPAK SO T/R |
Produkt ist nicht verfügbar |
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SQJ963EP-T1-GE3 | Hersteller : Vishay / Siliconix |
MOSFET RECOMMENDED ALT 781-SQJ963EP-T1_GE3 |
Produkt ist nicht verfügbar |