SQJ990EP-T1_GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET 2 N-CH 100V POWERPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1390pF @ 25V, 650pF @ 25V
Rds On (Max) @ Id, Vgs: 40mOhm @ 6A, 10V, 19mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 15nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 1.05 EUR |
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Technische Details SQJ990EP-T1_GE3 Vishay Siliconix
Description: MOSFET 2 N-CH 100V POWERPAK SO8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 48W, Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 34A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1390pF @ 25V, 650pF @ 25V, Rds On (Max) @ Id, Vgs: 40mOhm @ 6A, 10V, 19mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 15nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric, Part Status: Active.
Weitere Produktangebote SQJ990EP-T1_GE3 nach Preis ab 0.90 EUR bis 2.48 EUR
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SQJ990EP-T1_GE3 | Hersteller : Vishay / Siliconix |
MOSFET Dual N-Ch 100V Vds AEC-Q101 Qualified |
auf Bestellung 5991 Stücke: Lieferzeit 10-14 Tag (e) |
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SQJ990EP-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2 N-CH 100V POWERPAK SO8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 48W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1390pF @ 25V, 650pF @ 25V Rds On (Max) @ Id, Vgs: 40mOhm @ 6A, 10V, 19mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 15nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric Part Status: Active |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQJ990EP-T1_GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 17A/34A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO |
Produkt ist nicht verfügbar |
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SQJ990EP-T1_GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 17A/34A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO |
Produkt ist nicht verfügbar |
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SQJ990EP-T1_GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 17A/34A Automotive 5-Pin(4+Tab) PowerPAK SO |
Produkt ist nicht verfügbar |