Technische Details SQJA60EP-T1_GE3 Vishay
Description: MOSFET N-CH 60V 30A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 12.5mOhm @ 8A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote SQJA60EP-T1_GE3 nach Preis ab 0.77 EUR bis 2.07 EUR
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SQJA60EP-T1_GE3 | Vishay |
 Trans MOSFET N-CH 60V 30A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SQJA60EP-T1_GE3 | Vishay / Siliconix |
MOSFET 60V Vds PowerPAK AEC-Q101 Qualified |
auf Bestellung 23139 Stücke: Lieferzeit 10-14 Tag (e) |
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SQJA60EP-T1_GE3 | Vishay Siliconix |
Description: MOSFET N-CH 60V 30A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 12.5mOhm @ 8A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 2797 Stücke: Lieferzeit 10-14 Tag (e) |
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| SQJA60EP-T1_GE3 |
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Hersteller: Vishay
Trans MOSFET N-CH 60V 30A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R
Trans MOSFET N-CH 60V 30A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 225+ | 0.77 EUR |
| SQJA60EP-T1_GE3 |
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Hersteller: Vishay / Siliconix
MOSFET 60V Vds PowerPAK AEC-Q101 Qualified
MOSFET 60V Vds PowerPAK AEC-Q101 Qualified
auf Bestellung 23139 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.07 EUR |
| 10+ | 1.7 EUR |
| 100+ | 1.32 EUR |
| 500+ | 1.12 EUR |
| 1000+ | 0.92 EUR |
| 3000+ | 0.88 EUR |
| 6000+ | 0.87 EUR |
| SQJA60EP-T1_GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 30A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 8A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 30A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 8A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2797 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 2.07 EUR |
| 13+ | 1.71 EUR |
| 100+ | 1.33 EUR |
| 500+ | 1.13 EUR |
| 1000+ | 0.92 EUR |