SQJA70EP-T1_BE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: N-CHANNEL 100-V (D-S) 175C MOSFE
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 27W (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.48 EUR |
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Technische Details SQJA70EP-T1_BE3 Vishay Siliconix
Description: N-CHANNEL 100-V (D-S) 175C MOSFE, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Power Dissipation (Max): 27W (Tc), Rds On (Max) @ Id, Vgs: 95mOhm @ 4A, 10V, Current - Continuous Drain (Id) @ 25°C: 14.7A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR).
Weitere Produktangebote SQJA70EP-T1_BE3 nach Preis ab 0.55 EUR bis 1.9 EUR
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SQJA70EP-T1_BE3 | Vishay Siliconix |
Description: N-CHANNEL 100-V (D-S) 175C MOSFE Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 27W (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 14.7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) |
auf Bestellung 5977 Stücke: Lieferzeit 10-14 Tag (e) |
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| SQJA70EP-T1_BE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 100-V (D-S) 175C MOSFE
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 27W (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Description: N-CHANNEL 100-V (D-S) 175C MOSFE
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 27W (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 5977 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 1.9 EUR |
| 15+ | 1.19 EUR |
| 100+ | 0.78 EUR |
| 500+ | 0.61 EUR |
| 1000+ | 0.55 EUR |