SQJB46ELP-T1_GE3 Vishay / Siliconix
auf Bestellung 40760 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 1.92 EUR |
| 10+ | 1.57 EUR |
| 100+ | 1.22 EUR |
| 500+ | 1.03 EUR |
| 1000+ | 0.84 EUR |
| 3000+ | 0.77 EUR |
| 6000+ | 0.75 EUR |
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Technische Details SQJB46ELP-T1_GE3 Vishay / Siliconix
Description: AUTOMOTIVE DUAL N-CHANNEL 40 V (, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 34W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 25V, Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V, FET Feature: Standard, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PowerPAK® SO-8 Dual, Part Status: Active.
Weitere Produktangebote SQJB46ELP-T1_GE3 nach Preis ab 0.91 EUR bis 2.15 EUR
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| SQJB46ELP-T1_GE3 | Hersteller : Vishay Siliconix |
 Description: AUTOMOTIVE DUAL N-CHANNEL 40 V (Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 34W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 25V Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® SO-8 Dual Part Status: Active |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SQJB46ELP-T1_GE3 | Hersteller : Vishay Siliconix |
Description: AUTOMOTIVE DUAL N-CHANNEL 40 V ( Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 34W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 25V Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® SO-8 Dual Part Status: Active |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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