SQJB70EP-T1_BE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 100-V (D-S) 175C
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Rds On (Max) @ Id, Vgs: 95mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
Drain to Source Voltage (Vdss): 100V
Power - Max: 27W (Tc)
Technology: MOSFET (Metal Oxide)
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Technische Details SQJB70EP-T1_BE3 Vishay Siliconix
Description: DUAL N-CHANNEL 100-V (D-S) 175C, Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8 Dual, Packaging: Tape & Reel (TR), Part Status: Active, Supplier Device Package: PowerPAK® SO-8 Dual, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V, Rds On (Max) @ Id, Vgs: 95mOhm @ 4A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc), Drain to Source Voltage (Vdss): 100V, Power - Max: 27W (Tc), Technology: MOSFET (Metal Oxide).
Weitere Produktangebote SQJB70EP-T1_BE3 nach Preis ab 0.7 EUR bis 1.53 EUR
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SQJB70EP-T1_BE3 | Vishay Siliconix |
Description: DUAL N-CHANNEL 100-V (D-S) 175C Part Status: Active Supplier Device Package: PowerPAK® SO-8 Dual Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Rds On (Max) @ Id, Vgs: 95mOhm @ 4A, 10V Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc) Drain to Source Voltage (Vdss): 100V Power - Max: 27W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Packaging: Cut Tape (CT) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SQJB70EP-T1_BE3 |
|
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 100-V (D-S) 175C
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Rds On (Max) @ Id, Vgs: 95mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
Drain to Source Voltage (Vdss): 100V
Power - Max: 27W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Cut Tape (CT)
Description: DUAL N-CHANNEL 100-V (D-S) 175C
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Rds On (Max) @ Id, Vgs: 95mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
Drain to Source Voltage (Vdss): 100V
Power - Max: 27W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 12+ | 1.53 EUR |
| 13+ | 1.37 EUR |
| 100+ | 1.07 EUR |
| 500+ | 0.88 EUR |
| 1000+ | 0.7 EUR |