SQJQ100EL-T1_GE3 Vishay / Siliconix
| Anzahl | Preis |
|---|---|
| 1+ | 4.77 EUR |
| 10+ | 4.01 EUR |
| 100+ | 3.24 EUR |
| 500+ | 2.89 EUR |
| 1000+ | 2.46 EUR |
| 2000+ | 2.32 EUR |
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Technische Details SQJQ100EL-T1_GE3 Vishay / Siliconix
Description: MOSFET N-CH 40V 200A PPAK 8 X 8, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: PowerPAK® 8 x 8, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 150W (Tc), Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 200A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® 8 x 8, Packaging: Tape & Reel (TR).
Weitere Produktangebote SQJQ100EL-T1_GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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SQJQ100EL-T1_GE3 | Vishay Siliconix |
 Description: MOSFET N-CH 40V 200A PPAK 8 X 8Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: PowerPAK® 8 x 8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 8 x 8 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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SQJQ100EL-T1_GE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 200A PPAK 8 X 8 Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: PowerPAK® 8 x 8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 8 x 8 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SQJQ100EL-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 200A PPAK 8 X 8
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 8 x 8
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 200A PPAK 8 X 8
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 8 x 8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SQJQ100EL-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 200A PPAK 8 X 8
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 8 x 8
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 200A PPAK 8 X 8
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 8 x 8
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH