SQJQ906EL-T1_GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET 2 N-CH 40V POWERPAK8X8
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 8 x 8 Dual
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8 Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 3238pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 187W
Technology: MOSFET (Metal Oxide)
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Technische Details SQJQ906EL-T1_GE3 Vishay Siliconix
Description: MOSFET 2 N-CH 40V POWERPAK8X8, Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: PowerPAK® 8 x 8 Dual, Packaging: Tape & Reel (TR), Part Status: Active, Supplier Device Package: PowerPAK® 8 x 8 Dual, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V, Rds On (Max) @ Id, Vgs: 4.3mOhm @ 5A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 3238pF @ 20V, Current - Continuous Drain (Id) @ 25°C: 160A (Tc), Drain to Source Voltage (Vdss): 40V, Power - Max: 187W, Technology: MOSFET (Metal Oxide).
Weitere Produktangebote SQJQ906EL-T1_GE3 nach Preis ab 1.87 EUR bis 4.75 EUR
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SQJQ906EL-T1_GE3 | Vishay Siliconix |
Description: MOSFET 2 N-CH 40V POWERPAK8X8 Part Status: Active Supplier Device Package: PowerPAK® 8 x 8 Dual Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Rds On (Max) @ Id, Vgs: 4.3mOhm @ 5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 3238pF @ 20V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Drain to Source Voltage (Vdss): 40V Power - Max: 187W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: PowerPAK® 8 x 8 Dual Packaging: Cut Tape (CT) |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQJQ906EL-T1_GE3 | Vishay Semiconductors |
MOSFETs 40V Vds 160A Id AEC-Q101 Qualified |
auf Bestellung 3422 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SQJQ906EL-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2 N-CH 40V POWERPAK8X8
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8 Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 3238pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 187W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 8 x 8 Dual
Packaging: Cut Tape (CT)
Description: MOSFET 2 N-CH 40V POWERPAK8X8
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8 Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 3238pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 187W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 8 x 8 Dual
Packaging: Cut Tape (CT)
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 4.68 EUR |
| 10+ | 4.2 EUR |
| 100+ | 3.38 EUR |
| 500+ | 2.77 EUR |
| 1000+ | 2.3 EUR |
| SQJQ906EL-T1_GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs 40V Vds 160A Id AEC-Q101 Qualified
MOSFETs 40V Vds 160A Id AEC-Q101 Qualified
auf Bestellung 3422 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.75 EUR |
| 10+ | 3.63 EUR |
| 100+ | 2.55 EUR |
| 500+ | 2.18 EUR |
| 1000+ | 2.06 EUR |
| 2000+ | 1.94 EUR |
| 4000+ | 1.87 EUR |