SQM120N04-1m7L_GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 120A TO263
Qualification: AEC-Q101
Grade: Automotive
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 14606 pF @ 20 V
| Anzahl | Preis |
|---|---|
| 800+ | 2.45 EUR |
| 1600+ | 2.35 EUR |
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Technische Details SQM120N04-1m7L_GE3 Vishay Siliconix
Description: MOSFET N-CH 40V 120A TO263, Qualification: AEC-Q101, Grade: Automotive, Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: TO-263, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 375W (Tc), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 14606 pF @ 20 V.
Weitere Produktangebote SQM120N04-1m7L_GE3 nach Preis ab 2.43 EUR bis 6.69 EUR
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SQM120N04-1m7L_GE3 | Vishay / Siliconix |
MOSFETs 40V 120A 375W AEC-Q101 Qualified |
auf Bestellung 4737 Stücke: Lieferzeit 10-14 Tag (e) |
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SQM120N04-1m7L_GE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 120A TO263 Part Status: Active Supplier Device Package: TO-263 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 14606 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
auf Bestellung 2047 Stücke: Lieferzeit 10-14 Tag (e) |
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| SQM120N04-1m7L_GE3 |
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Hersteller: Vishay / Siliconix
MOSFETs 40V 120A 375W AEC-Q101 Qualified
MOSFETs 40V 120A 375W AEC-Q101 Qualified
auf Bestellung 4737 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 6.48 EUR |
| 10+ | 4.4 EUR |
| 100+ | 3.12 EUR |
| 500+ | 2.59 EUR |
| 800+ | 2.43 EUR |
| SQM120N04-1m7L_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 120A TO263
Part Status: Active
Supplier Device Package: TO-263
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 14606 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Description: MOSFET N-CH 40V 120A TO263
Part Status: Active
Supplier Device Package: TO-263
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 14606 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 2047 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 6.69 EUR |
| 10+ | 4.42 EUR |
| 100+ | 3.12 EUR |