SQM50034EL_GE3 Vishay
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 800+ | 1.11 EUR |
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Technische Details SQM50034EL_GE3 Vishay
Description: MOSFET N-CH 60V 100A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote SQM50034EL_GE3 nach Preis ab 1.12 EUR bis 3.91 EUR
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SQM50034EL_GE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) D2PAK Automotive AEC-Q101 |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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SQM50034EL_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 60V 100A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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SQM50034EL_GE3 | Hersteller : Vishay / Siliconix |
MOSFETs N-CHANNEL 60-V (D-S) 175C MOSFET |
auf Bestellung 7293 Stücke: Lieferzeit 10-14 Tag (e) |
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| SQM50034EL_GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 60V; 100A; 150W; D2PAK,TO263; SMT Type of transistor: N-MOSFET Technology: MOSFET Drain-source voltage: 60V Drain current: 100A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: 20V On-state resistance: 3.2mΩ Mounting: SMD Gate charge: 60nC Kind of channel: enhancement Application: automotive industry Electrical mounting: SMT |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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SQM50034EL_GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 100A Automotive 3-Pin(2+Tab) D2PAK |
Produkt ist nicht verfügbar |
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SQM50034EL_GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) D2PAK Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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SQM50034EL_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 60V 100A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |