SQP100P06-9M3L_GE3 Vishay Semiconductors

Description: MOSFET P-CH 60V 100A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 12010 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 187W (Tc), Rds On (Max) @ Id, Vgs: 9.3mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.