SQP120N10-09_GE3 Vishay / Siliconix
auf Bestellung 431 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.95 EUR |
| 10+ | 4.45 EUR |
| 100+ | 3.64 EUR |
| 500+ | 3.10 EUR |
| 1000+ | 2.62 EUR |
| 2500+ | 2.48 EUR |
| 5000+ | 2.43 EUR |
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Technische Details SQP120N10-09_GE3 Vishay / Siliconix
Description: MOSFET N-CH 100V 120A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 30A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8645 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SQP120N10-09_GE3 nach Preis ab 2.94 EUR bis 6.37 EUR
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SQP120N10-09_GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 100V 120A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 30A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8645 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 229 Stücke: Lieferzeit 10-14 Tag (e) |
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SQP120N10-09_GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 120A Automotive 3-Pin(3+Tab) TO-220AB |
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