SQP90142E_GE3 Vishay Semiconductors
| Anzahl | Preis |
|---|---|
| 1+ | 4.58 EUR |
| 10+ | 3.85 EUR |
| 25+ | 3.63 EUR |
| 100+ | 3.12 EUR |
| 250+ | 2.94 EUR |
| 500+ | 2.76 EUR |
| 1000+ | 2.38 EUR |
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Technische Details SQP90142E_GE3 Vishay Semiconductors
Description: MOSFET N-CH 200V 78.5A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 78.5A (Tc), Rds On (Max) @ Id, Vgs: 15.3mOhm @ 20A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: TO-220AB, Grade: Automotive, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote SQP90142E_GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| SQP90142E_GE3 | Vishay Siliconix |
 MOSFET N-CH 200V 78.5A TO220AB Транзистори |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
SQP90142E_GE3 | Vishay Siliconix |
Description: MOSFET N-CH 200V 78.5A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 78.5A (Tc) Rds On (Max) @ Id, Vgs: 15.3mOhm @ 20A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-220AB Grade: Automotive Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SQP90142E_GE3 |
|
Hersteller: Vishay Siliconix
MOSFET N-CH 200V 78.5A TO220AB Транзистори
MOSFET N-CH 200V 78.5A TO220AB Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SQP90142E_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 78.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78.5A (Tc)
Rds On (Max) @ Id, Vgs: 15.3mOhm @ 20A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 200V 78.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78.5A (Tc)
Rds On (Max) @ Id, Vgs: 15.3mOhm @ 20A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH