SQS142ENW-T1_GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8SLW
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Power Dissipation (Max): 113W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: PowerPAK® 1212-8SLW
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
| Anzahl | Preis |
|---|---|
| 3000+ | 0.57 EUR |
| 6000+ | 0.54 EUR |
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Technische Details SQS142ENW-T1_GE3 Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S), Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PowerPAK® 1212-8SLW, Vgs(th) (Max) @ Id: 3.3V @ 250µA, Power Dissipation (Max): 113W (Tc), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Wettable Flank, Package / Case: PowerPAK® 1212-8SLW, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V.
Weitere Produktangebote SQS142ENW-T1_GE3 nach Preis ab 0.55 EUR bis 2.16 EUR
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SQS142ENW-T1_GE3 | Vishay Siliconix |
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S) Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PowerPAK® 1212-8SLW Vgs(th) (Max) @ Id: 3.3V @ 250µA Power Dissipation (Max): 113W (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: PowerPAK® 1212-8SLW Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQS142ENW-T1_GE3 | Vishay Semiconductors |
MOSFETs N-CHANNEL 40-V (D-S) 175C MOSFET |
auf Bestellung 36399 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SQS142ENW-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8SLW
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Power Dissipation (Max): 113W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: PowerPAK® 1212-8SLW
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8SLW
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Power Dissipation (Max): 113W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: PowerPAK® 1212-8SLW
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 1.5 EUR |
| 14+ | 1.3 EUR |
| 100+ | 0.9 EUR |
| 500+ | 0.75 EUR |
| 1000+ | 0.64 EUR |
| SQS142ENW-T1_GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs N-CHANNEL 40-V (D-S) 175C MOSFET
MOSFETs N-CHANNEL 40-V (D-S) 175C MOSFET
auf Bestellung 36399 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 2.16 EUR |
| 10+ | 1.36 EUR |
| 100+ | 0.9 EUR |
| 500+ | 0.7 EUR |
| 1000+ | 0.64 EUR |
| 3000+ | 0.56 EUR |
| 6000+ | 0.55 EUR |