SQS160ELNW-T1_GE3 Vishay Semiconductors
| Anzahl | Preis |
|---|---|
| 2+ | 2.04 EUR |
| 10+ | 1.36 EUR |
| 100+ | 1.02 EUR |
| 500+ | 0.82 EUR |
| 1000+ | 0.71 EUR |
| 3000+ | 0.67 EUR |
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Technische Details SQS160ELNW-T1_GE3 Vishay Semiconductors
Description: AUTOMOTIVE N-CHANNEL 60 V (D-S), Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8SLW, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 141A (Tc), Rds On (Max) @ Id, Vgs: 4.3mOhm @ 10A, 10V, Power Dissipation (Max): 113W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® 1212-8SLW, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3866 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote SQS160ELNW-T1_GE3 nach Preis ab 0.75 EUR bis 2.5 EUR
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SQS160ELNW-T1_GE3 | Vishay Siliconix |
 Description: AUTOMOTIVE N-CHANNEL 60 V (D-S)Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8SLW Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 141A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 10A, 10V Power Dissipation (Max): 113W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8SLW Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3866 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 2015 Stücke: Lieferzeit 10-14 Tag (e) |
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| SQS160ELNW-T1_GE3 |
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Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 60 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SLW
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 141A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 10A, 10V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SLW
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3866 pF @ 25 V
Qualification: AEC-Q101
Description: AUTOMOTIVE N-CHANNEL 60 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SLW
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 141A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 10A, 10V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SLW
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3866 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2015 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 2.5 EUR |
| 12+ | 1.58 EUR |
| 100+ | 1.05 EUR |
| 500+ | 0.83 EUR |
| 1000+ | 0.75 EUR |