auf Bestellung 11730 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.42 EUR |
| 10+ | 1.17 EUR |
| 100+ | 0.91 EUR |
| 500+ | 0.87 EUR |
| 3000+ | 0.74 EUR |
| 6000+ | 0.73 EUR |
| 9000+ | 0.71 EUR |
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Technische Details SQS164ELNW-T1_GE3 Vishay Semiconductors
Description: AUTOMOTIVE N-CHANNEL 60 V (D-S), Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8SLW, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 82A (Tc), Rds On (Max) @ Id, Vgs: 7.4mOhm @ 10A, 10V, Power Dissipation (Max): 104W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® 1212-8SLW, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2159 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote SQS164ELNW-T1_GE3 nach Preis ab 0.69 EUR bis 2.04 EUR
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SQS164ELNW-T1_GE3 | Hersteller : Vishay Siliconix |
 Description: AUTOMOTIVE N-CHANNEL 60 V (D-S)Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8SLW Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 82A (Tc) Rds On (Max) @ Id, Vgs: 7.4mOhm @ 10A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8SLW Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2159 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 1937 Stücke: Lieferzeit 10-14 Tag (e) |
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SQS164ELNW-T1_GE3 | Hersteller : Vishay Siliconix |
Description: AUTOMOTIVE N-CHANNEL 60 V (D-S) Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8SLW Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 82A (Tc) Rds On (Max) @ Id, Vgs: 7.4mOhm @ 10A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8SLW Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2159 pF @ 25 V Qualification: AEC-Q101 |
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