SQUN700E-T1_GE3 Vishay Siliconix

Description: 40-V N- & P-CH COMMON DRAIN + 20, Part Status: Active, Supplier Device Package: Die, Vgs(th) (Max) @ Id: 3.5V @ 250µA, 2.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, 11nC @ 10V, 30.2nC @ 10V, Rds On (Max) @ Id, Vgs: 9.2mOhm @ 9.8A, 10V, 75mOhm @ 5A, 10V, 30mOhm @ 6A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1474pF @ 20V, 600pF @ 100V, 1302pF @ 100V, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), 30A (Tc), Drain to Source Voltage (Vdss): 200V, 40V, Power - Max: 50W (Tc), 48W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 N-Channel (Dual), P-Channel, Mounting Type: Surface Mount, Package / Case: Die, Packaging: Tape & Reel (TR).