SS115LSH Taiwan Semiconductor
auf Bestellung 19700 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 0.63 EUR |
| 10+ | 0.42 EUR |
| 100+ | 0.21 EUR |
| 500+ | 0.16 EUR |
| 1000+ | 0.12 EUR |
| 5000+ | 0.1 EUR |
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Technische Details SS115LSH Taiwan Semiconductor
Description: DIODE SCHOTTKY 150V 1A SOD123HE, Packaging: Tape & Reel (TR), Package / Case: SOD-123H, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 80pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: SOD-123HE, Operating Temperature - Junction: -55°C ~ 150°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 150 V, Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A, Current - Reverse Leakage @ Vr: 50 µA @ 150 V, Qualification: AEC-Q101.
Weitere Produktangebote SS115LSH nach Preis ab 0.11 EUR bis 0.65 EUR
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SS115LSH | Hersteller : Taiwan Semiconductor Corporation |
 Description: DIODE SCHOTTKY 150V 1A SOD123HEPackaging: Cut Tape (CT) Package / Case: SOD-123H Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 80pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123HE Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 150 V Qualification: AEC-Q101 |
auf Bestellung 15653 Stücke: Lieferzeit 10-14 Tag (e) |
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SS115LSH | Hersteller : Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 150V 1A SOD123HE Packaging: Tape & Reel (TR) Package / Case: SOD-123H Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 80pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123HE Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 150 V Qualification: AEC-Q101 |
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