SS3H10HE3_A/I Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 3A DO214AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 20 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
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Technische Details SS3H10HE3_A/I Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 3A DO214AB, Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 20 µA @ 100 V, Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A, Voltage - DC Reverse (Vr) (Max): 100 V, Grade: Automotive, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: DO-214AB (SMC), Current - Average Rectified (Io): 3A, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-214AB, SMC, Packaging: Tape & Reel (TR).
Weitere Produktangebote SS3H10HE3_A/I
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SS3H10HE3_A/I | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 3A DO214AB Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 20 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 100 V Grade: Automotive Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-214AB (SMC) Current - Average Rectified (Io): 3A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Cut Tape (CT) |
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