SS3P4LHM3_A/I Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes DivisionDescription: DIODE SCHOTTKY 40V 3A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 3 A
Current - Reverse Leakage @ Vr: 250 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 6265 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 12+ | 1.57 EUR |
| 19+ | 0.97 EUR |
| 100+ | 0.63 EUR |
| 500+ | 0.49 EUR |
| 1000+ | 0.44 EUR |
| 2000+ | 0.40 EUR |
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Technische Details SS3P4LHM3_A/I Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 3A TO277A, Packaging: Tape & Reel (TR), Package / Case: TO-277, 3-PowerDFN, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Current - Average Rectified (Io): 3A, Supplier Device Package: TO-277A (SMPC), Operating Temperature - Junction: -55°C ~ 150°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 40 V, Voltage - Forward (Vf) (Max) @ If: 470 mV @ 3 A, Current - Reverse Leakage @ Vr: 250 µA @ 40 V, Qualification: AEC-Q101.
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SS3P4LHM3_A/I | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 3A TO277A Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 470 mV @ 3 A Current - Reverse Leakage @ Vr: 250 µA @ 40 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |