SS9012GBU onsemi
Hersteller: onsemi
Description: TRANS PNP 20V 0.5A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 64 @ 50mA, 1V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 625 mW
Description: TRANS PNP 20V 0.5A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 64 @ 50mA, 1V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 625 mW
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
11539+ | 0.049 EUR |
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Produktbewertung abgeben
Technische Details SS9012GBU onsemi
Description: TRANS PNP 20V 0.5A TO92-3, Packaging: Bulk, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 64 @ 50mA, 1V, Supplier Device Package: TO-92-3, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 20 V, Power - Max: 625 mW.
Weitere Produktangebote SS9012GBU nach Preis ab 0.049 EUR bis 0.6 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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SS9012GBU | Hersteller : Fairchild Semiconductor |
Description: TRANS PNP 20V 0.5A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 64 @ 50mA, 1V Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 625 mW |
auf Bestellung 384811 Stücke: Lieferzeit 10-14 Tag (e) |
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SS9012GBU | Hersteller : onsemi / Fairchild | Bipolar Transistors - BJT PNP/40V/0.5A |
auf Bestellung 1602 Stücke: Lieferzeit 14-28 Tag (e) |
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SS9012-GBU |
auf Bestellung 20500 Stücke: Lieferzeit 21-28 Tag (e) |
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SS9012GBU | Hersteller : ONSEMI |
Description: ONSEMI - SS9012GBU - SS9012GBU, SINGLE BIPOLAR TRANSISTORS tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 40000 Stücke: Lieferzeit 14-21 Tag (e) |
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SS9012GBU | Hersteller : ON Semiconductor | Trans GP BJT PNP 20V 0.5A 625mW 3-Pin TO-92 Bag |
Produkt ist nicht verfügbar |