SSF2314 Good-Ark Semiconductor
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 4.5A, 20V,
Input Capacitance (Ciss) (Max) @ Vds: 775 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23
Power Dissipation (Max): 1.56W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.12 EUR |
| 6000+ | 0.11 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SSF2314 Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 4.5A, 20V,, Input Capacitance (Ciss) (Max) @ Vds: 775 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: SOT-23, Power Dissipation (Max): 1.56W (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote SSF2314
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
SSF2314 | Hersteller : Good-Ark Semiconductor |
Description: MOSFET, N-CH, SINGLE, 4.5A, 20V,Input Capacitance (Ciss) (Max) @ Vds: 775 pF @ 10 V Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: SOT-23 Power Dissipation (Max): 1.56W (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
Produkt ist nicht verfügbar |