SSF2341E

SSF2341E Good-Ark Semiconductor


SSF2341E.pdf
Hersteller: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -4A, -20V,
Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.4W
Rds On (Max) @ Id, Vgs: 43mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.13 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SSF2341E Good-Ark Semiconductor

Description: MOSFET, P-CH, SINGLE, -4A, -20V,, Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: SOT-23, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 1.4W, Rds On (Max) @ Id, Vgs: 43mOhm @ 4A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).

Weitere Produktangebote SSF2341E nach Preis ab 0.15 EUR bis 0.58 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
SSF2341E SSF2341E Hersteller : Good-Ark Semiconductor SSF2341E.pdf Description: MOSFET, P-CH, SINGLE, -4A, -20V,
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.4W
Rds On (Max) @ Id, Vgs: 43mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
auf Bestellung 2580 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
31+0.58 EUR
49+0.36 EUR
59+0.3 EUR
100+0.23 EUR
250+0.19 EUR
500+0.17 EUR
1000+0.15 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH