SSF3051G7 Good-Ark Semiconductor
Hersteller: Good-Ark SemiconductorDescription: MOSFET, P-CH, SINGLE, -4A, -30V,
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.4A, 10V
Power Dissipation (Max): 1.7W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 15 V
auf Bestellung 1677 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 27+ | 0.67 EUR |
| 45+ | 0.39 EUR |
| 55+ | 0.32 EUR |
| 100+ | 0.24 EUR |
| 250+ | 0.20 EUR |
| 500+ | 0.18 EUR |
| 1000+ | 0.16 EUR |
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Technische Details SSF3051G7 Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -4A, -30V,, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.4A, Rds On (Max) @ Id, Vgs: 48mOhm @ 4.4A, 10V, Power Dissipation (Max): 1.7W, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-23-6L, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 15 V.
Weitere Produktangebote SSF3051G7
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SSF3051G7 | Hersteller : Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -4A, -30V, Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A Rds On (Max) @ Id, Vgs: 48mOhm @ 4.4A, 10V Power Dissipation (Max): 1.7W Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-6L Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 15 V |
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