SSFN2603 Good-Ark Semiconductor
Hersteller: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -60A, -20V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 4.5V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-PPAK (3.1x3.05)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 15 V
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Technische Details SSFN2603 Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -60A, -20V, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 4.5V, Power Dissipation (Max): 62.5W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 8-PPAK (3.1x3.05), Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 15 V.
Weitere Produktangebote SSFN2603 nach Preis ab 0.42 EUR bis 0.88 EUR
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SSFN2603 | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -60A, -20V Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: 8-PPAK (3.1x3.05) Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 4.5V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
auf Bestellung 2960 Stücke: Lieferzeit 10-14 Tag (e) |
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| SSFN2603 |
|
Hersteller: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -60A, -20V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 8-PPAK (3.1x3.05)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET, P-CH, SINGLE, -60A, -20V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 8-PPAK (3.1x3.05)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 2960 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 24+ | 0.88 EUR |
| 34+ | 0.63 EUR |
| 38+ | 0.56 EUR |
| 100+ | 0.49 EUR |
| 250+ | 0.45 EUR |
| 500+ | 0.43 EUR |
| 1000+ | 0.42 EUR |