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SSFQ3712

SSFQ3712 Good-Ark Semiconductor

SSFQ3712.pdf Hersteller: Good-Ark Semiconductor
Description: MOSFET, N+P, DUAL, 30V, SOP-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc), 5.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V, 810pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V, 50mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V, 7nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
auf Bestellung 2940 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
25+0.72 EUR
29+ 0.62 EUR
31+ 0.58 EUR
100+ 0.46 EUR
250+ 0.43 EUR
500+ 0.36 EUR
1000+ 0.28 EUR
Mindestbestellmenge: 25
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Technische Details SSFQ3712 Good-Ark Semiconductor

Description: MOSFET, N+P, DUAL, 30V, SOP-8, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.5W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), 5.5A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V, 810pF @ 15V, Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V, 50mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V, 7nC @ 4.5V, FET Feature: Standard, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOP, Part Status: Active.

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SSFQ3712 Hersteller : Good-Ark ssfq3712.pdf 30V N-Channel and P-Channel MOSFET
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SSFQ3712 SSFQ3712 Hersteller : Good-Ark Semiconductor SSFQ3712.pdf Description: MOSFET, N+P, DUAL, 30V, SOP-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc), 5.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V, 810pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V, 50mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V, 7nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Produkt ist nicht verfügbar