auf Bestellung 9507 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.48 EUR |
| 10+ | 1.11 EUR |
| 100+ | 0.93 EUR |
| 1000+ | 0.91 EUR |
| 2500+ | 0.84 EUR |
| 5000+ | 0.8 EUR |
| 10000+ | 0.79 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SSM10N954L,EFF Toshiba
Description: COMMON-DRAIN NCH MOSFET, 12V, 13, Packaging: Tape & Reel (TR), Package / Case: 10-SMD, No Lead, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), Rds On (Max) @ Id, Vgs: 2.75mOhm @ 6A, 4.5V, Power Dissipation (Max): 800mW (Ta), Vgs(th) (Max) @ Id: 1.4V @ 1.11mA, Supplier Device Package: TCSPAC-153001, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4 V.
Weitere Produktangebote SSM10N954L,EFF nach Preis ab 0.92 EUR bis 1.48 EUR
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SSM10N954L,EFF | Hersteller : Toshiba Semiconductor and Storage |
 Description: COMMON-DRAIN NCH MOSFET, 12V, 13Packaging: Cut Tape (CT) Package / Case: 10-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta) Rds On (Max) @ Id, Vgs: 2.75mOhm @ 6A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1.4V @ 1.11mA Supplier Device Package: TCSPAC-153001 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4 V |
auf Bestellung 9825 Stücke: Lieferzeit 10-14 Tag (e) |
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| SSM10N954L,EFF | Hersteller : Toshiba |
Trans MOSFET N-CH Si 10-Pin T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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SSM10N954L,EFF | Hersteller : Toshiba Semiconductor and Storage |
Description: COMMON-DRAIN NCH MOSFET, 12V, 13 Packaging: Tape & Reel (TR) Package / Case: 10-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta) Rds On (Max) @ Id, Vgs: 2.75mOhm @ 6A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1.4V @ 1.11mA Supplier Device Package: TCSPAC-153001 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4 V |
Produkt ist nicht verfügbar |