| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.76 EUR |
| 10+ | 1.32 EUR |
| 100+ | 1.11 EUR |
| 1000+ | 1.08 EUR |
| 2500+ | 1.04 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SSM10N954L,EFF Toshiba
Description: COMMON-DRAIN NCH MOSFET, 12V, 13, Mounting Type: Surface Mount, Package / Case: 10-SMD, No Lead, Packaging: Tape & Reel (TR), Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4 V, Drain to Source Voltage (Vdss): 12 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Part Status: Active, Supplier Device Package: TCSPAC-153001, Vgs(th) (Max) @ Id: 1.4V @ 1.11mA, Power Dissipation (Max): 800mW (Ta), Rds On (Max) @ Id, Vgs: 2.75mOhm @ 6A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C.
Weitere Produktangebote SSM10N954L,EFF nach Preis ab 1.09 EUR bis 1.76 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SSM10N954L,EFF | Toshiba Semiconductor and Storage |
 Description: COMMON-DRAIN NCH MOSFET, 12V, 13Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: TCSPAC-153001 Vgs(th) (Max) @ Id: 1.4V @ 1.11mA Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 2.75mOhm @ 6A, 4.5V Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 10-SMD, No Lead Packaging: Cut Tape (CT) Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4 V |
auf Bestellung 9825 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SSM10N954L,EFF |
|
Hersteller: Toshiba Semiconductor and Storage
Description: COMMON-DRAIN NCH MOSFET, 12V, 13
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TCSPAC-153001
Vgs(th) (Max) @ Id: 1.4V @ 1.11mA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 2.75mOhm @ 6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 10-SMD, No Lead
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4 V
Description: COMMON-DRAIN NCH MOSFET, 12V, 13
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TCSPAC-153001
Vgs(th) (Max) @ Id: 1.4V @ 1.11mA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 2.75mOhm @ 6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 10-SMD, No Lead
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4 V
auf Bestellung 9825 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 1.76 EUR |
| 16+ | 1.31 EUR |
| 100+ | 1.09 EUR |