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SSM14N956L,EFF

SSM14N956L,EFF Toshiba

SSM14N956L_datasheet_en_20231010-3175341.pdf Hersteller: Toshiba
MOSFET 12V Common Drain MOSFET Rss(on): 1.1mOhm
auf Bestellung 29809 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.18 EUR
10+1.78 EUR
100+1.39 EUR
500+1.18 EUR
1000+0.96 EUR
2500+0.94 EUR
10000+0.85 EUR
Mindestbestellmenge: 2
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Technische Details SSM14N956L,EFF Toshiba

Description: MOSFET 2N-CH 12V 20A TCSPED, Packaging: Tape & Reel (TR), Package / Case: 14-SMD, No Lead, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), Power - Max: 1.33W (Ta), Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), Rds On (Max) @ Id, Vgs: 1.35mOhm @ 10A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 76nC @ 4V, Vgs(th) (Max) @ Id: 1.4V @ 1.57mA, Supplier Device Package: TCSPED-302701.

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SSM14N956L,EFF SSM14N956L,EFF Hersteller : Toshiba Semiconductor and Storage SSM14N956L_datasheet_en_20231010.pdf?did=151761&prodName=SSM14N956L Description: MOSFET 2N-CH 12V 20A TCSPED
Packaging: Cut Tape (CT)
Package / Case: 14-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.33W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 10A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 76nC @ 4V
Vgs(th) (Max) @ Id: 1.4V @ 1.57mA
Supplier Device Package: TCSPED-302701
auf Bestellung 5618 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.39 EUR
11+1.66 EUR
100+1.16 EUR
500+0.99 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
SSM14N956L,EFF SSM14N956L,EFF Hersteller : Toshiba Semiconductor and Storage SSM14N956L_datasheet_en_20231010.pdf?did=151761&prodName=SSM14N956L Description: MOSFET 2N-CH 12V 20A TCSPED
Packaging: Tape & Reel (TR)
Package / Case: 14-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.33W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 10A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 76nC @ 4V
Vgs(th) (Max) @ Id: 1.4V @ 1.57mA
Supplier Device Package: TCSPED-302701
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Im Einkaufswagen  Stück im Wert von  UAH