| Anzahl | Preis |
|---|---|
| 2+ | 2.18 EUR |
| 10+ | 1.78 EUR |
| 100+ | 1.39 EUR |
| 500+ | 1.18 EUR |
| 1000+ | 0.96 EUR |
| 2500+ | 0.94 EUR |
| 10000+ | 0.85 EUR |
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Technische Details SSM14N956L,EFF Toshiba
Description: MOSFET 2N-CH 12V 20A TCSPED, Packaging: Tape & Reel (TR), Package / Case: 14-SMD, No Lead, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), Power - Max: 1.33W (Ta), Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), Rds On (Max) @ Id, Vgs: 1.35mOhm @ 10A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 76nC @ 4V, Vgs(th) (Max) @ Id: 1.4V @ 1.57mA, Supplier Device Package: TCSPED-302701.
Weitere Produktangebote SSM14N956L,EFF nach Preis ab 0.99 EUR bis 2.39 EUR
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SSM14N956L,EFF | Toshiba Semiconductor and Storage |
 Description: MOSFET 2N-CH 12V 20A TCSPEDPackaging: Cut Tape (CT) Package / Case: 14-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 1.33W (Ta) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 1.35mOhm @ 10A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 76nC @ 4V Vgs(th) (Max) @ Id: 1.4V @ 1.57mA Supplier Device Package: TCSPED-302701 |
auf Bestellung 5618 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SSM14N956L,EFF |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 12V 20A TCSPED
Packaging: Cut Tape (CT)
Package / Case: 14-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.33W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 10A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 76nC @ 4V
Vgs(th) (Max) @ Id: 1.4V @ 1.57mA
Supplier Device Package: TCSPED-302701
Description: MOSFET 2N-CH 12V 20A TCSPED
Packaging: Cut Tape (CT)
Package / Case: 14-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.33W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 10A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 76nC @ 4V
Vgs(th) (Max) @ Id: 1.4V @ 1.57mA
Supplier Device Package: TCSPED-302701
auf Bestellung 5618 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 2.39 EUR |
| 11+ | 1.66 EUR |
| 100+ | 1.16 EUR |
| 500+ | 0.99 EUR |