SSM3J118TU(TE85L) Toshiba Semiconductor and Storage

Description: MOSFET P-CH 30V 1.4A UFM, Rds On (Max) @ Id, Vgs: 240mOhm @ 650mA, 10V, Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-SMD, Flat Leads, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 137 pF @ 15 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Part Status: Active, Supplier Device Package: UFM, Power Dissipation (Max): 500mW (Ta).